Geometry

Info

ID:

13473

ICSD:

29343

Name:

Silicon oxide - subcell

Comp.:

O2Si1

Symm.:

 P6322(182)

Latt.:

 hexagonal

Spin:

 0.000

Eg/Eg':

5.494/5.485 eV

me/mh:

2.479/148.348

K-data

high symmetry path:

G - A - L - M - G - K - H - A

high symmetry points:

A: 0.0 0.0 0.5 G: 0.0 0.0 0.0 H: -0.333 0.667 0.5 K: -0.333 0.667 0.0 M: 0.0 0.5 0.0 L: 0.0 0.5 0.5

DOS

Bands